Semiconductor spin qubits offer a unique opportunity for scalable quantum computation by leveraging classical transistor technology. This has triggered a worldwide effort to develop spin qubits, in particular, in Si and Ge based quantum dots, both for electrons and for holes. Due to strong spin orbit interaction, hole spin qubits benefit from ultrafast all-electrical qubit control and sweet spots to counteract charge and nuclear spin noise . In this talk I will present an overview of the state-of-the art in the field and focus, in particular, on recent developments on hole spin physics in Ge and Si nanowires, Si FinFETs, and Ge heterostructures.